Bin Zhao received his Ph.D. degree from California Institute of Technology. He has been with SEMATECH, Rockwell, Conexant, Skyworks, Freescale, Fairchild, and ON Semiconductor. He has worked on advanced VLSI technology development and design of analog/mixed-signal, power management, and RF IC products. In 1997, he fabricated the industry-first Cu/low-k (k<3) dual-damascene interconnect by developing a successful fabrication process for the Cu/SiOCH low-k dual-damascene interconnect, which is widely used in today’s high-performance IC products. He has authored and coauthored more than 200 journal publications and conference presentations, has written three book chapters, and holds more than 70 issued US patents. He has served as the Founding Co-Chair, Technical Working Group of RF and Analog/Mixed-Signal IC Technologies for Wireless Communications, International Technology Roadmap for Semiconductors (ITRS); IEEE EDS Vice President of Conferences; IEEE EDS Vice President of Publications; Chair, Editorial Steering Committee, IEEE Journal of Microelectromechanical Systems (J-MEMS); Chair, IEEE Johnson Technology Award Committee. He is an IEEE Fellow and the past Chair of the IEEE Conference Committee.